计算机与现代化 ›› 2013, Vol. 1 ›› Issue (9): 190-194,.doi: 10.3969/j.issn.1006-2475.2013.09.047

• 应用与开发 • 上一篇    下一篇

高可靠性片上系统总线结构的参数优化

叶 凝1,应忍冬1,朱新忠2,李 超2,刘佩林1   

  1. 1.上海交通大学北斗导航与位置服务上海市重点实验室,上海 200240;2.上海航天计算机技术研究所,上海 200050
  • 收稿日期:2013-05-02 修回日期:1900-01-01 出版日期:2013-09-17 发布日期:2013-09-17

Parameter Optimization of High-reliable Bus in System-on-Chip

YE Ning1, YING Ren-dong1, ZHU Xin-zhong2, LI Chao2, LIU Pei-lin1   

  1. 1. Shanghai Key Laboratory of Navigation and Location Based Service, Shanghai Jiaotong University, Shanghai 200240, China;2. Shanghai Spaceflight Computer Technology Institute, Shanghai 200050, China
  • Received:2013-05-02 Revised:1900-01-01 Online:2013-09-17 Published:2013-09-17

摘要: 为加强航天器片上系统面对单粒子效应引发的软错误时的健壮性,针对片上系统的总线,建立出错率的模型与总线可靠性公式。然后分3种情况,结合参数的取值约束范围,讨论参数的最优化取值,分别给出3种情况下使总线获得最高可靠性的参数取值。

关键词: 单粒子效应, 可靠性, 建模, 参数优化

Abstract: In order to enhance the robustness of SoC against single event effect (SEE), we focused on the improving of reliability for bus on chip. We built models for error rate of bus and equations of bus reliability. Concerning three situations, we restricted the value of parameters and thus, discussed the optimization of the parameters. For each of the situation, we give the optimized value of parameters that brings us the highest reliability for bus on chip.

Key words: single event effect, reliability, modeling, parameter optimization

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